Technology licensing agreement will advance development of GF’s next generation GaN technologies with products available in late 2026 for Datacenter, Industrial and Automotive Customers
Vermont Business Magazine GlobalFoundries (Nasdaq: GFS) today announced that it has entered into a technology licensing agreement with TSMC for 650V and 80V Gallium Nitride (GaN) technology. This strategic move will accelerate GF’s next generation of GaN products for datacenter, industrial and automotive power applications and provide U.S.-based GaN capacity for a global customer base.
GF will qualify the licensed GaN technology at its manufacturing facility in Burlington, Vermont, leveraging the site’s expertise in high-voltage GaN-on-Silicon technology to accelerate volume production for customers seeking next-generation power devices. Development is set for early 2026, with production to begin later in the year.
GF said it will qualify the licensed GaN technology at its Burlington, Vermont, manufacturing site. This site already has well-established expertise in high-voltage GaN-on-Silicon technology and is being modernized and equipped to move toward volume manufacturing for global customers needing next-generation power devices.
"At this time, we are not announcing additional manufacturing job creation or larger facility expansions beyond what we previously disclosed as a part of the CHIPS Act-funded modernization efforts of which the Vermont facility is a key component," GF stated.
As traditional silicon CMOS technologies (Complementary Metal-Oxide-Semiconductor) hit their performance limits, GaN is emerging as the next-generation solution for meeting the increasing demand for higher efficiency, power density and compactness in power systems.
GF is developing a comprehensive GaN portfolio, including high-performance 650V and 80V technologies aimed at enabling electric vehicles, datacenters, renewable energy systems and fast-charging electronics. GF’s GaN solutions are designed for harsh environments, with a holistic approach to GaN reliability that spans process development, device performance and application integration.
“This agreement reinforces GF’s commitment to innovation and its strategic focus on differentiated technologies that address essential power devices that we use to live, work and connect,” said Téa Williams, senior vice president, power business at GlobalFoundries. “With the addition of this proven GaN technology, we will accelerate the development of our next-generation GaN chips and deliver differentiated solutions that address critical power gaps for mission critical applications from the datacenter, to the car, and to the factory floor.”
About GF
GlobalFoundries (GF) is a leading manufacturer of essential semiconductors the world relies on to live, work and connect. We innovate and partner with customers to deliver more power-efficient, high-performance products for the automotive, smart mobile devices, internet of things, communications infrastructure and other high-growth markets. With our global manufacturing footprint spanning the U.S., Europe, and Asia, GF is a trusted and reliable source for customers around the world. Every day, our talented global team delivers results with an unyielding focus on security, longevity, and sustainability.
MALTA, N.Y., November 10, 2025 – GlobalFoundries. www.gf.com.
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